Applied Physics Letters · 1999 · 17 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesMemory DevicesQuantum TunnelingSemiconductor Device MaterialsSpintronicsAmorphous SiliconHydrogenated Amorphous SiliconMagnetic Tunnel JunctionsMagnetic Tunneling JunctionsMagnetoresistanceSelectivityTunnel JunctionsTunneling Magnetoresistance
This work demonstrates integration of magnetic tunneling junctions with hydrogenated amorphous silicon (a-Si:H) diodes. In the finished device 11.4% current change is measured when the junction free layer is switched in an external magnetic field, for 0.86 V applied to the junction-diode series. In the integrated device, the measured individual tunneling magnetoresistance signal is 25.3% at 7 mV bias, demonstrating junction robustness and process compatibility. The junction-diode series is necessary for bit selectivity in magnetic random access memories. Vertical growth of these devices may allow higher density architectures.
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High density submicron magnetoresistive random access memory (invited)
S. Tehrani, E. Chen, M. Durlam et al. · Journal of Applied Physics · 1999 · 189 citations
Large tunneling magnetoresistance enhancement by thermal anneal
R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations
Natural Sciences, Electrical Engineering, Materials Science +13