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Defects in CdTe and Cd1−Zn Te
73
Citations
15
References
1996
Year
Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
G. Mandel
Physical Review
SemiconductorsIi-vi SemiconductorElectrical EngineeringSemiconductor DeviceBinary Semiconductors +11
1964
315
Identification of the chlorine<i>A</i>center in CdTe
D.M. Hofmann, P. Omling, H. G. Grimmeiss, +3
Physical review. B, Condensed matter
Crystal StructureEngineeringChemistryQuantum MaterialsStructure Determination +16
1992
198
Properties of CdZnTe crystals grown by a high pressure Bridgman method
F. Patrick Doty, J.F. Butler, J. F. Schetzina, +1
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
Materials EngineeringMaterials ScienceCdznte CrystalsHigh-pressure BridgmanInert Gas +11
181
Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them
Robert W. Jansen, Otto F. Sankey
EngineeringRelative Point-defect AbundancesDefect ChemistryEquilibrium Statistical MechanicsDefect Tolerance +16
1989
129
Identification of the cadmium vacancy in CdTe by electron paramagnetic resonance
P. Emanuelsson, P. Omling, B. K. Meyer, +2
EngineeringMagnetic ResonanceChemistryElectronic StructureSemiconductors +16
1993
126
Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors
M. Fiederle, D. Ebling, C. Eiche, +5
Journal of Crystal Growth
X-ray CrystallographyMaterials ScienceX-ray SpectroscopyCdte0.9se0.1 CrystalsCrystalline Defects +9
1994
94
On the application of the photo-EPR technique to the studies of photoionization, DAP recombination, and non-radiative recombination processes
M. Godlewski
physica status solidi (a)
Chemical EngineeringDap RecombinationPhotochemistryMechanistic PhotochemistryNon-radiative Recombination Processes +3
1985
75
<i>F</i>center in CdTe
B. K. Meyer, P. Omling, E. Weigel, +1
SpintronicsQuantum ScienceExcited State PropertyEngineeringPhysics +13
59
Characterization of deep levels in CdTe by photo-EPR and related techniques
W. Jantsch, G. Hendorfer
Deep LevelsEngineeringElectron MicroscopyMicroscopyMicroscopy Method +9
1990
56
Possible identification of zinc-vacancy<i>–</i>donor-impurity complexes in zinc telluride by optically detected magnetic resonance
J. Bittebierre, R.T. Cox
Optical MaterialsEngineeringMagnetic ResonanceSpin PhenomenonIi-vi Semiconductor +18
1986
54
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