DC and RF characteristics of 0.7-μm-gate-length diamond metal–insulator–semiconductor field effect transistor

Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Kazushi Hayashi, Sadanori Yamanaka, Hideyo Okushi et al. · Applied Physics Letters · 1996 · 224 citations

Engineering, Semiconductors, Hall Effect Measurements +18

Hydrogenating Effect of Single-Crystal Diamond Surface

Tetsuro Maki, Syozo Shikama, M. Komori et al. · Japanese Journal of Applied Physics · 1992 · 174 citations

Materials Science, Diamond-like Carbon, Diffusion Depth +9

Diamond surface-channel FET structure with 200 V breakdown voltage

P. Gluche, A. Aleksov, Andrei Vescan et al. · IEEE Electron Device Letters · 1997 · 103 citations

Diamond-like Carbon, Electrical Engineering, Engineering +12

High-preformance diamond surface-channel field-effect transistors and their operation mechanism

Kazuo Tsugawa, K. Kitatani, Hiroshi Noda et al. · Diamond and Related Materials · 1999 · 101 citations

Diamond-like Carbon, Electrical Engineering, Engineering +6

High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi, Hitoshi Umezawa, T. Arima et al. · IEEE Electron Device Letters · 2001 · 99 citations

Electrical Engineering, Microwave Performance, Engineering +11