Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane

Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

Shigehiro Nishino, Y. Hazuki, Hiroyuki Matsunami et al. · Journal of The Electrochemical Society · 1980 · 180 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001)

Yajun Wang, Robert J. Hamers, Efthimios Kaxiras · Physical Review Letters · 1995 · 100 citations · Full text

Natural Sciences, Materials Science, Physics +17

Atomic structure of the metastable<i>c</i>(4×4) reconstruction of Si(100)

R. I. G. Uhrberg, John E. Northrup, D. K. Biegelsen et al. · Physical review. B, Condensed matter · 1992 · 77 citations

Natural Sciences, Chemistry, Materials Science +17

Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition

Yuuki Ishida, Tetsuo Takahashi Tetsuo Takahashi, Hajime Okumura et al. · Japanese Journal of Applied Physics · 1997 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Kanji Yasui, Kunio Asada, Tomohiro Maeda et al. · Applied Surface Science · 2001 · 40 citations

Engineering, Materials Engineering, Materials Science +14