Oxygen-related deep levels in oxygen doped EFG poly-Si

Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

P. M. Mooney, L. J. Cheng, M. Süli et al. · Physical review. B, Solid state · 1977 · 297 citations

Natural Sciences, Materials Science, Physics +17

Defect states associated with dislocations in silicon

Lionel C. Kimerling, J. R. Patel · Applied Physics Letters · 1979 · 192 citations

Natural Sciences, Materials Science, Physics +17

EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon

K. L. Brower · Physical review. B, Solid state · 1974 · 95 citations

Natural Sciences, Materials Science, Physics +14

Influence of oxygen precipitation along dislocations on the strength of silicon crystals

Ichiro Yonenaga, Kôji Sumino · Journal of Applied Physics · 1996 · 80 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Interface shape studies for silicon ribbon growth by the EFG technique

J.P. Kalejs, L.-Y. Chin, F. M. Carlson · Journal of Crystal Growth · 1983 · 30 citations

Engineering, Materials Engineering, Materials Science +13