Effect of Al doping on the retention behavior of HfO2 resistive switching memories

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.6K citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Daniele Ielmini · IEEE Transactions on Electron Devices · 2011 · 516 citations

Engineering, Universal Set/reset Characteristics, Temperature-driven Filament Growth +17

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability

Stefano Ambrogio, Simone Balatti, Antonio Cubeta et al. · IEEE Transactions on Electron Devices · 2014 · 218 citations · Full text

Reset State, Electrical Engineering, Non-volatile Memory +11

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Haowei Zhang, Lifeng Liu, Bin Gao et al. · Applied Physics Letters · 2011 · 203 citations

Materials Science, Oxygen Vacancy Filaments, Electrical Engineering +15

Ionic doping effect in ZrO2 resistive switching memory

Haowei Zhang, Bin Gao, Bing Sun et al. · Applied Physics Letters · 2010 · 172 citations

Materials Engineering, Materials Science, Electrical Engineering +12