Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe

<i>p</i>-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

R. M. Park, M. B. Troffer, Christopher M. Rouleau et al. · Applied Physics Letters · 1990 · 600 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Heavily doped <i>p</i>-ZnSe:N grown by molecular beam epitaxy

Jun Qiu, J. M. DePuydt, Hai‐Ping Cheng et al. · Applied Physics Letters · 1991 · 293 citations

Optical Materials, Engineering, N Films +16

Metalorganic vapor phase epitaxy of low-resistivity <i>p</i>-type ZnSe

T. Yasuda, Iwao Mitsuishi, Hiroshi Kukimoto · Applied Physics Letters · 1988 · 207 citations

Materials Engineering, Materials Science, Semiconductors +15

Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition

W. Stutius · Journal of Crystal Growth · 1982 · 156 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +8

Characterization of <i>p</i>-type ZnSe

M. A. Haase, Hai‐Ping Cheng, J. M. DePuydt et al. · Journal of Applied Physics · 1990 · 130 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14