Selective amorphization of ion-bombarded SiGe strained-layer superlattices

Abstract

Si/SixGe1−x multilayers were implanted with Si ions of 540 keV at doses between 1.0×1014 and 2.5×1015 ions/cm2. Channeling spectra were taken using 3 MeV B++ ions. These measurements showed a rapid increase of the Ge minimum yield with implantation dose. The increases were paralleled by a growth of disorder peaks in those parts of the Si backscattering spectrum corresponding to the SixGe1−x layers. After 1.2×1015 Si ions/cm2 the SiGe layers were completely amorphized. Cross-sectional transmission electron microscope pictures confirmed the selective amorphization of the SiGe layers. Annealing of an irradiated sample resulted in recrystallization of all the amorphous layers in the 450–550 °C temperature range.

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