Impact ionization rates in (100) A1 _0.48 In _0.52 As

Abstract

Impact ionization rates for electrons and holes in (100) A1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> As were determined from photo multiplication measurements using AIInAs / FaInAs <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p +-i-n</sup> diodes grown by metal-organic vapor phase epitaxy (MOVPE). The impact ionization rate ratio (prop; / beta;) was derived as being 2.0 ~ 3.5 over the electric field range from 400 to 650 KV / cm. Ionization rates were found to be smaller than those previously reported.