Concepedia

F. Osaka

FO

Statistics

Publications

19

Citations

470

H-Index

13

Active since

1974

Affiliations

Fujitsu (Japan)(Current)

Hiroshima University

Olympus (Japan)

Interdisciplinary Scientific Research

NTT Basic Research Laboratories

F. Osaka is an author at Fujitsu (Japan) specializing in applied physics, engineering, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsMicroscopyMaterial ScienceSurface ScienceAtomic PhysicsOptoelectronicsCondensed Matter PhysicsSemiconductors

Publications per year

1974–1996

19

Publications

19

Impact ionization coefficients of electrons and holes in

F. Osaka, Takashi Mikawa, T. Kaneda · IEEE Journal of Quantum Electronics · 1985 · 95 citations

Engineering, Impact Ionization Coefficients, Physics +10

Atomic resolution imaging of InP(110) surface observed with ultrahigh vacuum atomic force microscope in noncontact mode

Yasuhiro Sugawara, Masumi Ohta, H. Ueyama et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 44 citations

Engineering, Microscopy, Noncontact Mode +19

Scanning tunneling microscopy of molecular-beam epitaxially grown GaAs (001) surfaces

Ichiro Tanaka, Shunsuke Ohkouchi, Takashi Kato et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 42 citations

Materials Science, Semiconductors, Stm Chamber +13

Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes

F. Osaka, T. Mikawa · IEEE Journal of Quantum Electronics · 1986 · 39 citations

Photonics, Electrical Engineering, Engineering +14

Electron and hole impact ionization rates in InP/Ga&lt;inf&gt;0.47&lt;/inf&gt;In&lt;inf&gt;0.53&lt;/inf&gt;As superlattice

F. Osaka, Takashi Mikawa, Osamu Wada · IEEE Journal of Quantum Electronics · 1986 · 38 citations

Ion Implantation, Engineering, Inp/gainas Superlattice Photodiode +10

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