Applied Physics Letters · 1993 · 22 citations · 11 references
Materials ScienceSemiconductorsEpitaxial GrowthEngineeringCrystalline DefectsPhysicsSurface ScienceApplied PhysicsMultilayer HeterostructuresSilicide GrowthGsmbe Grown HeterostructuresThin FilmsMolecular Beam EpitaxyGrowth PhasesSilicon On Insulator
Epitaxial iron disilicide thin layers have been grown on silicon by gas source molecular beam epitaxy (GSMBE) in the temperature range 450–550 °C. Fe(CO)5 and SiH4 are used as sources for the silicide growth on a heated Si(111) surface. The growth phases are characterized in situ by means of high-resolution electron energy loss spectroscopy, ultraviolet and x-ray photoelectron spectroscopies. The formation of an epitaxial metallic γ-FeSi2 layer at the interface with the silicon substrate is revealed and no complete relaxation of this strained metastable interface layer is observed, as the growth proceeds with the semiconducting equilibrium β-FeSi2 phase. The coexistence in the GSMBE grown heterostructures of the metallic (CaF2) and semiconducting (orthorhombic) FeSi2 structures is confirmed by cross-section transmission electron microscopy.
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Mechanism of Electrical Conduction in β‐FeSi<sub>2</sub>
U. Birkholz, J. Schelm · physica status solidi (b) · 1968 · 287 citations