A. Rizzi

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

S. Shokhovets, R. Goldhahn, G. Gobsch et al. · Journal of Applied Physics · 2003 · 105 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +17

Surface Potential at as-Grown GaN(0001) MBE Layers

M. Ko an, A. Rizzi, H. L�th et al. · physica status solidi (b) · 2002 · 105 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy

Dagmar Gerthsen, E. Hahn, B. Neubauer et al. · physica status solidi (a) · 2000 · 93 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Florian Werner, F. Limbach, Michael Carsten et al. · Nano Letters · 2009 · 74 citations

Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)

A. Rizzi, H. Moritz, H. Lüth · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 63 citations

Engineering, Vibrational Properties, Fesi2 Thin Layers +19