F. Limbach

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

Timo Schumann, Tobias Gotschke, F. Limbach et al. · Nanotechnology · 2011 · 105 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Florian Werner, F. Limbach, Michael Carsten et al. · Nano Letters · 2009 · 74 citations

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Tobias Gotschke, Timo Schumann, F. Limbach et al. · Applied Physics Letters · 2011 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

Karl K. Sabelfeld, Vladimir M. Kaganer, F. Limbach et al. · Applied Physics Letters · 2013 · 45 citations

Engineering, Height Self-equilibration, Nanoelectronics +17

Highly polarized Raman scattering anisotropy in single GaN nanowires

E. O. Schäfer-Nolte, T. Stoïca, Tobias Gotschke et al. · Applied Physics Letters · 2010 · 39 citations

Engineering, Physics, Nanotechnology +8