F. Limbach - Concepedia

Author

F. Limbach

Jülich Aachen Research Alliance

Also Known As

F A Limbach, F Limbach, F. Limbach, Friederich Limbach, Limbach, Friederich

Publications

498

Citations

H-Index

Concepts

All Affiliations

Jülich Aachen Research Alliance Paul Drude Institute for Solid State Electronics Forschungszentrum Jülich Brookhaven National Laboratory University of Göttingen

About

F. Limbach is an author at Jülich Aachen Research Alliance specializing in applied physics, engineering, and nanotechnology.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	372
2	Applied Physics	10	10	372
3	Materials Science	7	7	222
4	Electrical Engineering	6	6	267
5	Chemistry	1	1	22

F. Limbach

Publications

483

Citations

H-Index

Page 1

	Year	Citations
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer Timo Schumann, Tobias Gotschke, F. Limbach, Nanotechnology Materials ScienceWide-bandgap SemiconductorElectrical EngineeringGan Nw FormationEngineering	2011	105
Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface Florian Werner, F. Limbach, Michael Carsten, Nano Letters	2009	74
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays Tobias Gotschke, Timo Schumann, F. Limbach, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanotechnology	2011	66
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder Karl K. Sabelfeld, Vladimir M. Kaganer, F. Limbach, Applied Physics Letters EngineeringHeight Self-equilibrationNanoelectronicsNanoscale ModelingNanoscale Science	2013	45
Highly polarized Raman scattering anisotropy in single GaN nanowires E. O. Schäfer-Nolte, T. Stoïca, Tobias Gotschke, Applied Physics Letters EngineeringPhysicsNanotechnologySurface-enhanced Raman ScatteringApplied Physics	2010	39
Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy F. Limbach, Tobias Gotschke, T. Stoïca, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsOptical Properties	2011	29
Self‐organized growth of InN‐nanocolumns on p‐Si(111) by MBE Christian Denker, J. Malindretos, Florian Werner, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics EngineeringChemistrySemiconductor NanostructuresNanoscale ChemistryNanostructure Synthesis	2008	22
The influence of Mg doping on the nucleation of self-induced GaN nanowires F. Limbach, R. Caterino, Tobias Gotschke, AIP Advances Materials ScienceNanowire NucleationElectrical EngineeringWide-bandgap SemiconductorEngineering	2012	22
Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires E. O. Schäfer-Nolte, T. Stoïca, Tobias Gotschke, Nanotechnology	2010	20
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires Mattia Musolino, A. Tahraoui, F. Limbach, Applied Physics Letters Wide-bandgap SemiconductorEngineeringN/gan NanowiresNanoelectronicsLight-emitting Diodes	2014	19

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