Tobias Gotschke

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Sergio Fernández‐Garrido, Xiang Kong, Tobias Gotschke et al. · Nano Letters · 2012 · 112 citations · Full text

Natural Sciences, Materials Science, Physics +17

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

Sergio Fernández‐Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld et al. · Nano Letters · 2013 · 112 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

Timo Schumann, Tobias Gotschke, F. Limbach et al. · Nanotechnology · 2011 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +17

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Martin Wölz, Christian Hauswald, Timur Flissikowski et al. · Nano Letters · 2015 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Tobias Gotschke, Timo Schumann, F. Limbach et al. · Applied Physics Letters · 2011 · 67 citations

Engineering, Materials Engineering, Materials Science +17