Martin Wölz

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Martin Wölz, Christian Hauswald, Timur Flissikowski et al. · Nano Letters · 2015 · 75 citations

Materials Science, Metallic Tin Film, Electrical Engineering +14

Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy

Martin Wölz, M. Ramsteiner, Vladimir M. Kaganer et al. · Nano Letters · 2013 · 35 citations

Luminous Efficiency of Axial In_<i>x</i>Ga_1–<i>x</i>N/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Oliver Marquardt, Christian Hauswald, Martin Wölz et al. · Nano Letters · 2013 · 30 citations

Wide-bandgap Semiconductor, Luminous Efficiency, Surface Potentials +16

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

Bumsu Park, Ja Kyung Lee, Christoph T. Koch et al. · Advanced Science · 2022 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Ingan/gan Nanowire Heterostructures +17

Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Martin Wölz, Vladimir M. Kaganer, O. Brandt et al. · Applied Physics Letters · 2011 · 23 citations

Materials Science, Wide-bandgap Semiconductor, Axial Superlattice +12