Seeded growth of GaN single crystals from solution at near atmospheric pressure

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpiński, J. Jun, S. Porowski · Journal of Crystal Growth · 1984 · 388 citations

Engineering, Materials Engineering, Materials Science +12

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

Eric J Miller, Edward T. Yu, Patrick Waltereit et al. · Applied Physics Letters · 2004 · 298 citations

Engineering, Electrical Engineering, Materials Science +16

Mechanism of yellow luminescence in GaN

T. Suski, P. Perlin, H. Teisseyre et al. · Applied Physics Letters · 1995 · 217 citations

Engineering, Materials Engineering, Materials Science +17

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

Leah Bergman, Dimitri Alexson, Patrick L. Murphy et al. · Physical review. B, Condensed matter · 1999 · 202 citations

Natural Sciences, Materials Science, Physics +16

Growth and characterization of freestanding GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Journal of Crystal Growth · 2002 · 188 citations

Engineering, Materials Engineering, Materials Science +12