Vapour phase epitaxial growth of high purity GaAs with the AsCl3-Ga-N2 system

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

Electron Transport in GaAs

D. L. Rode, Stephen Knight · Physical review. B, Solid state · 1971 · 254 citations

Natural Sciences, Electrical Engineering, Physics +17

The preparation of high purity gallium arsenide by vapour phase epitaxial growth

J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +12

Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers

J.V. DiLorenzo · Journal of Crystal Growth · 1972 · 135 citations

Engineering, Electrical Engineering, Materials Science +16

Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs

J.V. DiLorenzo, George E. Moore · Journal of The Electrochemical Society · 1971 · 66 citations

Engineering, Materials Engineering, Materials Science +17