Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.4K citations

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ZnO-based transparent thin-film transistors

Randy Hoffman, B. Norris, John F. Wager · Applied Physics Letters · 2003 · 1.4K citations

Natural Sciences, Electrical Engineering, Materials Science +17

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

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Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Elvira Fortunato, Pedro Barquinha, Ana Pimentel et al. · Applied Physics Letters · 2004 · 541 citations

Engineering, Electrical Engineering, Materials Science +17

Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

Satoshi Masuda, Ken Kitamura, Yoshihiro Okumura et al. · Journal of Applied Physics · 2003 · 537 citations

Engineering, Electrical Engineering, Materials Science +17