High quality Si-doped GaAs layers grown by molecular beam epitaxy

Generation and Distribution of Dislocations by Solute Diffusion

S. Prussin · Journal of Applied Physics · 1961 · 589 citations

Engineering, Materials Engineering, Materials Science +17

GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face

A. Y. Cho · Journal of Applied Physics · 1971 · 297 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electron Transport in GaAs

D. L. Rode, Stephen Knight · Physical review. B, Solid state · 1971 · 254 citations

Natural Sciences, Electrical Engineering, Physics +17

Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction

F. Jona · IBM Journal of Research and Development · 1965 · 213 citations

Natural Sciences, Materials Science, Physics +17

Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy

A. Y. Cho · Journal of Applied Physics · 1975 · 162 citations

Engineering, Materials Engineering, Materials Science +17