Concepedia

T. Murotani

TM

Statistics

Publications

27

Citations

762

H-Index

18

Active since

1972

Affiliations

Mitsubishi Electric (Japan)(Current)

Mitsubishi Electric (Germany)

Setsunan University

T. Murotani is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial ScienceOptoelectronicsSemiconductorsPhysicsMicroelectronicsSolar CellsPhotovoltaics

Publications per year

1972–2002

27

Publications

27

Growth temperature dependence in molecular beam epitaxy of gallium arsenide

T. Murotani, T. Shimanoe, S. Mitsui · Journal of Crystal Growth · 1978 · 104 citations

Materials Science, Growth Temperature Dependence, Engineering +6

Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In<sub>x</sub>Ga<sub>1-x</sub>As-GaAs<sub>y</sub>P<sub>1-y</sub>

Takashi Nishimura, Kazuo Mizuguchi, N. Hayafuji et al. · Japanese Journal of Applied Physics · 1987 · 52 citations

Semiconductors, Materials Science, Etch Pit Density +14

Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

N. Hayafuji, S. Ochi, M. Miyashita et al. · Journal of Crystal Growth · 1988 · 50 citations

Wide-bandgap Semiconductor, Algaas/gaas Superlattices, Electrical Engineering +5

Low threshold InGaAsP/InP buried crescent laser with double current confinement structure

E. Oomura, T. Murotani, H. Higuchi et al. · IEEE Journal of Quantum Electronics · 1981 · 44 citations

Engineering, Laser Science, Ingaasp/inp Laser Diode +16

MOCVD GaAs growth on Ge (100) and Si (100) substrates

K. Mizuguchi, N. Hayafuji, S. Ochi et al. · Journal of Crystal Growth · 1986 · 41 citations

Electrical Engineering, Engineering, Mocvd Gaas Growth +5

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