Gallium arsenide digital integrated circuits

Heterostructure bipolar transistors and integrated circuits

H. Kroemer · Proceedings of the IEEE · 1982 · 915 citations

Engineering, Electrical Engineering, Materials Science +13

Band-structure-dependent transport and impact ionization in GaAs

H. Shichijo, K. Hess · Physical review. B, Condensed matter · 1981 · 305 citations

Engineering, Electrical Engineering, Materials Science +17

A comparison of semiconductor devices for high-speed logic

P. M. Solomon · Proceedings of the IEEE · 1982 · 191 citations

Engineering, Computer Engineering, Electrical Engineering +12

Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

T. J. Drummond, W. T. Masselink, H. Morkoç̌ · Proceedings of the IEEE · 1986 · 113 citations

Engineering, Electrical Engineering, Physics +17

The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need

H. Morkoç, P. M. Solomon · IEEE Spectrum · 1984 · 83 citations

Engineering, Electrical Engineering, Materials Science +17