Band-structure-dependent transport and impact ionization in GaAs

Abstract

We have performed a Monte Carlo simulation of high-field transport in GaAs including a realistic band structure to study the band-structure dependence of electron transport and impact ionization. The band structure has been calculated using the empirical pseudopotential method. Unlike previous theories of impact ionization, our method is capable of calculating various parameters, such as mean free path, from first principles. The calculated electron mean free path, drift velocity, and impact ionization rate are in reasonable agreement with the experimental data in spite of several simplifications of the model. Within statistical uncertainty we do not observe any orientation dependence of the ionization rate in contradiction to the interpretation of recently reported experimental results. We also find that the contribution of ballistic electrons to impact ionization is negligibly small. Based on the results of the calculation, a general discussion of impact ionization is given.