IEEE Spectrum · 1984 · 83 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsHigh-frequency Semiconductor DevicesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride Power DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-temperature Device OperationSelf-heating EffectsSingle-electron TransistorsSwitching DevicesTransistors For Power Conversion
A description is given of an experimental GaAs-AlGaAs device that switches in picoseconds and generates little heat. Known as MODFET or HEMT, the device is compared to other less conventional devices, and an outline is presented of its operation.