Journal of Applied Physics · 1996 · 23 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsDislocations In SemiconductorsDopingEpitaxial GrowthInorganic MaterialsSemiconductor Device MaterialsSilicon MaterialsP-type DopingSiliconSilicon DopingSolid-state Doping
The gettering efficiency process in platinum doped fast rectifiers was studied by transmission electron microscopy. We have observed orthorhombic PtSi-(monocrystalline) precipitates in n+ gettering region with the following epitaxial relationship: (011)PtSi//{110}Si with [010]PtSi//〈112〉Si. This precipitation can be related to the presence of orthorhombic SiP particles induced by highly phosphorus doping, without any dislocations around them.
12
Mechanism of Diffusion of Copper in Germanium
F. C. Frank, David Turnbull · Physical Review · 1956 · 579 citations
Mechanism and kinetics of the diffusion of gold in silicon
U. Gösele, W. Frank, A. Seeger · Applied Physics A · 1980 · 361 citations