Resistive switching properties and physical mechanism of cobalt ferrite thin films

Abstract

We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory.