SURFACE-STATE RELATED <i>l/f</i> NOISE IN <i>p-n</i> JUNCTIONS AND MOS TRANSISTORS

Abstract

It is shown experimentally that l/f noise both in silicon p-n junctions and in MOS transistors can be increased by the introduction of a particular type of surface state. The additional noise power is proportional to the density of these states. The surface states are introduced by the application of an electric field across the oxide at elevated temperatures (e.g., ∼300°C); they are relatively ineffective as surface recombination centers.