1/<i>f</i>Noise in Germanium Devices

Abstract

A number of theories have recently been proposed to explain 1/f noise in germanium filaments. These theories may be extended to germanium devices and suggest experiments which may be performed to give evidence of their validity. Specially made diodes with a free surface opposite the junction were used and simultaneous field effect and noise measurements were made in an attempt to correlate the noise with surface properties. A study of noise in the breakdown region of a reverse biased p-n junction was carried out. The results of all the experiments are discussed and a noise model suggested by one of the theories tentatively proposed.