Formation of buried CoSi2 layers with ion beam synthesis at low implantation energies

Algorithms for the rapid simulation of Rutherford backscattering spectra

Lawrence Doolittle · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 2.8K citations

Engineering, Physics, Electron Diffraction +3

Transistor action in Si/CoSi2/Si heterostructures

J. C. Hensel, A. F. J. Levi, R. T. Tung et al. · Applied Physics Letters · 1985 · 172 citations

Semiconductors, Engineering, Physics +9

Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si

C. W. T. Bulle‐Lieuwma, A. H. van Ommen, L.J. van IJzendoorn · Applied Physics Letters · 1989 · 87 citations · Full text

Engineering, Chemistry, Heteroepitaxial Si/cosi2/si +16

Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si

A. H. van Ommen, J. J. M. Ottenheim, A. M. L. Theunissen et al. · Applied Physics Letters · 1988 · 75 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Depth profiling by ion-beam spectrometry

P. B�rgesen, R. Behrisch, B.M.U. Scherzer · Applied Physics A · 1982 · 60 citations

Microscopy, Spectroscopy, Mass Spectrometry +5