R. Jebasinski

New interface structure for <i>A</i>-type CoSi2/Si(111)

M. F. Chisholm, S. J. Pennycook, R. Jebasinski et al. · Applied Physics Letters · 1994 · 25 citations

Transition Metal Chalcogenides, Engineering, Physics +12

Permeable-base transistors with ion-implanted CoSi2 gate

A. Schüppen, S. Mantl, L. Vescan et al. · Materials Science and Engineering B · 1992 · 20 citations

Electrical Engineering, Semiconductor Device, Ion-implanted Cosi2 Gate

The effect of dose on the growth of buried CoSi2 layers in (111) and (100) Si produced by ion implantation

S. Mantl, R. Jebasinski, D. Hartmann · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 17 citations

Materials Science, Ion Implantation, Engineering +7

Diffuse x-ray scattering from thin films with defects

David F. Bahr, W. Press, R. Jebasinski et al. · Physical review. B, Condensed matter · 1995 · 16 citations

Materials Science, Incidence Diffraction, X-ray Spectroscopy +14

Formation of buried CoSi2 layers with ion beam synthesis at low implantation energies

R. Jebasinski, S. Mantl, L. Vescan et al. · Applied Surface Science · 1991 · 16 citations

Materials Science, Ion Implantation, Engineering +8