From measurement to intrinsic device characteristics: Test structures and parasitic determination

Abstract

mm-Wave applications claim for accurate and reliable device models for their very high frequency operation range. This is not possible without any representative measurement of the intrinsic device performances especially HF small-signal measurements. In this paper we determine major parasitic contributions of regular HF test structures. Parasitic investigation goes from the probes down to the transistor. Original dummies are described and HF/DC measurements are presented and analyzed. Based on this limited set of structures a scalable de-embedding approach is described. To account for DC/HF parasitics, a sub-circuit is proposed for modeling purpose.