IEEE Transactions on Electron Devices · 2013 · 35 citations · 28 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsMicrowave EngineeringCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave OscillatorsRadio-frequency Integrated CircuitsCmos OscillatorsCmos Radio-frequency CircuitsInductor DesignLow-phase-noise OscillatorsMillimeter-wave Integrated CircuitsPhase NoiseTuningTuning Range
In conventional integrated circuit technologies, a grounded metal guard ring (MGR) is widely used to mitigate the coupling effect between any pair of inductors. Full-wave electromagnetic (EM) simulation results indicate that the guard ring size can significantly affect the inductance value of a single-turn planar inductor. This paper proposes a switchable artificial grounded MGR technique that can not only serve as a guard ring but also change the inductance. Accordingly, an inductor, featuring switchable inductance and high quality factor, is developed for a 60-GHz millimeter-wave wide-frequency tuning range (wide-FTR) and low phase-noise voltage-controlled oscillator (VCO) in 90-nm bulk CMOS technology. The VCO testkey achieves a total tuning range of 9.43 GHz (17%). The measured phase noise levels are -92.2 and -119 dBc/Hz at 1- and 10-MHz offsets, respectively. The experimental results demonstrate that the proposed inductor topology offers the VCO an increase of 36% in the FTR and a competitive performance in phase noise, as contrasted with a conventional varactor-tuned VCO. This VCO achieves a record of -188 dBc/Hz for the FOM <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> .
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RF-CMOS oscillators with switched tuning
A. Kral, F. Behbahani, A.A. Abidi · 2002 · 406 citations
Kelin J. Kuhn, M.D. Giles, D. Becher et al. · IEEE Transactions on Electron Devices · 2011 · 365 citations
Engineering, Computer Engineering, Electrical Engineering +17