Depletion characteristics of two-dimensional lateral p-n-junctions

Abstract

We have fabricated two-dimensional in-plane p-n junctions from a p-doped pseudomorphic GaAs∕In0.1Ga0.9As∕Al0.35Ga0.65As heterostructure employing Si compensation doping by focused ion beam implantation. The current–voltage characteristics at room temperature showed good rectifying behavior, and the current in the reverse direction was below 1nA for voltages up to 10V. The depletion width was measured by optical beam-induced current, and a linear dependence on the reverse bias was found which is in contrast to the square root dependence observed in three-dimensional junctions. The results agree well with theoretical predictions.