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Silicon carbide high-power devices

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 435 citations

Electrical Engineering, High Thermal Conductivity, Engineering +12

Doping of SiC by Implantation of Boron and Aluminum

T. Troffer, M. Schadt, Thomas Frank et al. · physica status solidi (a) · 1997 · 291 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

K.P. Schoen, J. M. Woodall, James A. Cooper et al. · IEEE Transactions on Electron Devices · 1998 · 212 citations

Electrical Engineering, Engineering, Power Device +13

High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Takayuki Narushima, Takashi Goto, Toshio Hirai · Journal of the American Ceramic Society · 1989 · 181 citations

Materials Science, Materials Engineering, Chemical Engineering +13

Oxidation kinetics of hot-pressed silicon carbide

Subhash C. Singhal · Journal of Materials Science · 1976 · 171 citations

Materials Science, Materials Engineering, Chemical Engineering +6