Laser Physics Letters · 2005 · 12 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsLaser DiodesOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor LasersAlloy Composition EffectsDistributed Bragg Reflector LasersFabricationMetal Alloy CompositionPower OutputSemiconductor Laser DiodesThreshold Current ReductionVertical-cavity Surface-emitting Lasers
In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and Al x Ga 1-x As alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.
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