Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates

Abstract

Long-wavelength InGaAs-InAlGaAs strained quantum-well lasers have been fabricated on In/sub 0.22/Ga/sub 0.78/As ternary substrates grown by the Bridgman method. The threshold current density and lasing wavelength at 20/spl deg/C are 245 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 1.226 μm, respectively. The device has lased up to 210/spl deg/C, which is the highest operating temperature ever reported for long-wavelength semiconductor lasers. The temperature sensitivity of the slope efficiency between 20/spl deg/C and 120/spl deg/C is only -0.0051 dB/K, showing suppressed carrier overflow owing to deep potential quantum wells. These high-temperature durabilities of this laser are fascinating features for application to optical subscriber and optical interconnection systems.