UHV-CVD growth and annealing of thin fully relaxed Ge films on (001)Si

Physics and applications of Ge_xSi_1-x/Si strained-layer heterostructures

R. People · IEEE Journal of Quantum Electronics · 1986 · 706 citations

Engineering, Materials Science, Physics +17

High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin C. Lee et al. · Applied Physics Letters · 1999 · 677 citations

Engineering, Materials Engineering, Materials Science +16

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, D.D. Cannon et al. · Applied Physics Letters · 2003 · 390 citations

Engineering, Materials Engineering, Materials Science +17

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 1998 · 248 citations

Engineering, Electrical Engineering, Materials Science +17