Journal of Applied Physics · 1983 · 83 citations · 12 references
SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringDislocation InteractionCrystalline DefectsApplied PhysicsCondensed Matter PhysicsStrain RateLower Yield PointYield (Engineering)Defect FormationSilicon On InsulatorYield PointSemiconductor DevicePlastic Deformation
Measurements of the lower yield point in silicon and germanium, covering wide ranges of temperature and strain rate, are presented. The results indicate that Haasen’s model for the beginning of the plastic deformation of semiconductors has to be modified for germanium, while it is confirmed for silicon.
12
Plastic deformation of silicon between 20 °C and 425 °C
J. Rabier, P.-O. Renault, D. Eyidi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2007 · 136 citations
Engineering, Severe Plastic Deformation, Mechanical Engineering +20
Velocities of Screw and 60°‐Dislocations in Silicon
A. George, C. Escaravage, G. Champier et al. · physica status solidi (b) · 1972 · 98 citations
Dislocation Mobility in Germanium
M. N. Kabler · Physical Review · 1963 · 79 citations
Engineering, Severe Plastic Deformation, Dislocation Mobility +18