physica status solidi (b) · 1972 · 98 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceMechanical Behavior Of MaterialsSemiconductor DevicesSolid MechanicsDeformation MechanismsDislocation MechanicsDislocation TheoryDislocations In SemiconductorsPlastic DeformationStress-strain BehaviorActivation EnergyDislocation BehaviorDislocation DynamicsDislocation MotionDislocation PhysicsKink InstabilityScrew DislocationsTemperature Dependence Of Deformation
Abstract The velocities of screw and 60°‐dislocations in silicon have been measured for temperatures T between 580 and 800 °C and stresses τ between 0.1 and 3 kp/mm 2 . The activation energy for the movement of 60°‐dislocations Q 60° is stress‐dependent in the whole stress range, that for screw dislocation Q s is constant for τ ≧ 0.4 kp/mm 2 and becomes also stress‐dependent below 0.4 kp/mm 2 . The current theories for kink motion do not yield a satisfactory description of the experimental results.
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Dislocations in the diamond lattice
J. Hornstra · Journal of Physics and Chemistry of Solids · 1958 · 521 citations
Theory of Dislocation Mobility in Semiconductors
V. Celli, M. N. Kabler, T. Ninomiya et al. · Physical Review · 1963 · 265 citations