Plastic deformation of silicon between 20 °C and 425 °C

Abstract

Abstract Mechanical data have been obtained on silicon single crystal under hydrostatic pressure between room temperature and 450 °C. This temperature domain corresponds to the regime where perfect dislocations control plastic deformation. This was achieved using a D‐DIA apparatus in the synchrotron beam of NSLS. Stress strain curves were deduced from X Ray diffraction and sample imaging under 5 GPa and a strain rate of 2.5 10 –5 s –1 . Yield stresses as a function of temperature exhibit different temperature dependence when deformation is controlled by perfect dislocations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)