Applied Physics Letters · 2003 · 99 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceMaterials ChemistryThin FilmsEpitaxial GrowthOxide SemiconductorsSemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsAtomic BondingEpitaxial InterfacesEpitaxial MaterialsHigh-resolution Transmission Electron MicroscopyInterface FormationInterfacial Oxide LayersMolecular Beam EpitaxySilicon
The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states have been established. With a good understanding of the mechanisms of the interfacial layer formations, the molecular-beam epitaxy growth process can be well controlled to form high-quality, single-crystalline oxide films, as well as a desired interface between the grown oxide and silicon substrate. The epitaxial relationship has been found to be SrTiO3 (001)∥Si(001), and SrTiO3 〈100〉∥Si〈110〉.
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Handbook of X-Ray Photoelectron Spectroscopy
J. F. Moulder · Medical Entomology and Zoology · 1995 · 23.7K citations
Field effect transistors with SrTiO3 gate dielectric on Si
K. Eisenbeiser, J. Finder, Zhiping Yu et al. · Applied Physics Letters · 2000 · 296 citations