Field effect transistors with SrTiO3 gate dielectric on Si

Abstract

SrTiO 3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO2. This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the SrTiO3 and the Si is 6.4×1010 states/cm2 eV and the inversion layer mobility is 221 and 62 cm2/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar SiO2 gate dielectric field effect transistor.