Applied Physics Letters · 2000 · 296 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDielectricsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsOxide SemiconductorsSemiconductor InterfacesGate DielectricsGate LeakageGate Leakage CurrentGate Oxide LeakageInterface DensityInterface Trap DensityMolecular Beam EpitaxySilicon-on-insulator Technology
SrTiO 3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO2. This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the SrTiO3 and the Si is 6.4×1010 states/cm2 eV and the inversion layer mobility is 221 and 62 cm2/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar SiO2 gate dielectric field effect transistor.
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