Study of rapid thermal annealing on ultra thin high-k HfO2 films properties for nano scaled MOSFET technology

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.8K citations

Engineering, Band Gap, Semiconductor Device +16

First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

Xinyuan Zhao, David Vanderbilt · Physical review. B, Condensed matter · 2002 · 705 citations · Full text

Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

D. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 437 citations

Engineering, Semiconductors, Chemical Engineering +19

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

E. P. Gusev, E. Cartier, D. A. Buchanan et al. · Microelectronic Engineering · 2001 · 385 citations

Materials Engineering, Materials Science, Engineering +8

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

M.-H. Cho, Youngchae Roh, C. N. Whang et al. · Applied Physics Letters · 2002 · 337 citations

Materials Science, Hfo2 Films, Epitaxial Growth +15