The use of titanium-based contact barrier layers in silicon technology

References

Page 1

	Year	Citations
Models for contacts to planar devices H.H. Berger Solid-State Electronics Geometric ModelingEngineeringDesignWearable TechnologyComputer Engineering	1972	912
Models for contacts to planar devices Microelectronics Reliability Geometric ModelingEngineeringDesignWearable TechnologyComputer Engineering	1972	818
Diffusion barriers in thin films M.−A. Nicolet Thin Solid Films Materials ScienceEngineeringDiffusion ResistanceSurface ScienceApplied Physics	1978	681
Contact Resistance and Contact Resistivity H.H. Berger Journal of The Electrochemical Society Materials ScienceSemiconductorsElectrical EngineeringEngineeringContact Resistivity Measurements	1972	496
Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon Andrew S. Grove, Otto Leistiko, C. T. Sah Journal of Applied Physics Materials ScienceElectrical EngineeringChemical EngineeringEngineeringDonor Impurities	1964	332
SLT Device Metallurgy and its Monolithic Extension P. A. Totta, R.P. Sopher IBM Journal of Research and Development	1969	240
Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits J. O. McCaldin, H. Sankur Applied Physics Letters Aluminium NitrideEngineeringWrought AlIntegrated CircuitsSilicon On Insulator	1971	178
Diffusion barriers in layered contact structures M-A. Nicolet, M. Bartur Journal of Vacuum Science and Technology Materials EngineeringMaterials ScienceStuffed BarrierEngineeringDiffusion Resistance	1981	168
TiN formed by evaporation as a diffusion barrier between Al and Si C. Y. Ting Journal of Vacuum Science and Technology Aluminium NitrideEngineeringMaterial InnovationChemical DepositionMaterial System	1982	168
Beam-Lead Technology M.P. Lepselter Bell System Technical Journal Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)	1966	161

Page 1