Three-terminal operation of the double-heterostructure optoelectronic switching laser

Abstract

The double-heterostructure optoelectronic switch is demonstrated as a three-terminal laser. The basic laser structure employs a graded index single quantum well (GRIN SQW) and implements the third-terminal injector as a self-aligned implant to the inversion channel. The implant simultaneously serves as the optical confining layer. Threshold currents of 500 A/cm2 are obtained and complete control of the switching characteristic is obtained with an input current density of 0.8 A/cm2.