AIP Advances · 2013 · 85 citations · 22 references
Optical MaterialsEngineeringElectron-beam LithographyBeam LithographyOptical PropertiesNanometrologyOptical SystemsProspective MoveNanolithography MethodNanophotonicsMaterials SciencePhotonicsPhysicsNanotechnologyProjection SystemMicroelectronicsNext Generation NanolithographyDepth-graded Multilayer CoatingApplied PhysicsNanofabricationOptoelectronics
A prospective move to 10.5 and 11.2 nm wavelengths, as an alternative to 6.7 and 13.5 nm, for next generation nanolithography is discussed. Ten-mirror optical systems based on Ru/Be, Mo/Be, Rh/Sr, Mo/Si, and La/B multilayers were compared for efficiency at their working wavelengths. It is shown that a transition to 10.5 nm and 11.2 nm may be a solution to the problem of increasing performance and resolution of a projection system.
22
Christian Wagner, Noreen Harned · Nature Photonics · 2009 · 608 citations
EUV spectra of Gd and Tb ions excited in laser-produced and vacuum spark plasmas
S S Churilov, R R Kildiyarova, A N Ryabtsev et al. · Physica Scripta · 2009 · 107 citations