physica status solidi (a) · 1977 · 58 citations · 8 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsDefects In Electronic MaterialsDislocations In SemiconductorsDopingElectronic Band StructureSemiconductor PhysicsSilicon MaterialsConductionConduction BandDislocation BehaviorDislocation CoresDislocationsHall EffectValence BandValence Band Structure
An investigation is made of the de conductivity and the Hall effect in heavily dislocated Si crystals doped with boron (1013 cm−3) and phosphorus (2 × 1014 cm−3). In such crystals two levels are shown to exist, namely, donor-acceptor level with E1 = (0.42 ± 0.03) eV above the valence band and acceptor level with E2 = (0.43 ± 0.03) eV below the conduction band. Both E1- and E2-levels are assumed to be due to dislocations and to correspond to states of electrons localized in cores of dislocations with edge components.
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Electrical Properties of Dislocations in Ge and Si
W. Schröter, R. Labusch · physica status solidi (b) · 1969 · 129 citations
On the electronic states at dislocations in germanium
R. Labusch, R. Schettler · physica status solidi (a) · 1972 · 48 citations