Concepedia

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

Hajime Okumura, Hiroshi Hamaguchi, T. Koizumi, K. Balakrishnan, Yuuki Ishida, Munetaka Arita, Shigefusa F. Chichibu, Hideyuki Nakanishi, T. Nagatomo, S. Yoshida

Journal of Crystal Growth · 1998 · 74 citations · 10 references

DOI

Concepts

References

10

First-principles calculations of effective-mass parameters of AlN and GaN

Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase · Physical review. B, Condensed matter · 1995 · 631 citations

, , +17

Quasiparticle band structure of AlN and GaN

Ángel Rubio, Jennifer L. Corkill, Marvin L. Cohen et al. · Physical review. B, Condensed matter · 1993 · 347 citations

, , +16

Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda · Journal of Applied Physics · 1982 · 272 citations

, , +16

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

, , +17

Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN

G. Ramı́rez-Flores, H. Navarro‐Contreras, A. Lastras‐Martínez et al. · Physical review. B, Condensed matter · 1994 · 214 citations

, , +17