Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

First-principles calculations of effective-mass parameters of AlN and GaN

Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase · Physical review. B, Condensed matter · 1995 · 622 citations

Materials Science, Cubic Approximation, Wide-bandgap Semiconductor +15

Quasiparticle band structure of AlN and GaN

Ángel Rubio, Jennifer L. Corkill, Marvin L. Cohen et al. · Physical review. B, Condensed matter · 1993 · 344 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +13

Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda · Journal of Applied Physics · 1982 · 272 citations

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 223 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16

Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN

G. Ramı́rez-Flores, H. Navarro‐Contreras, A. Lastras-Martı́nez et al. · Physical review. B, Condensed matter · 1994 · 212 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18