Japanese Journal of Applied Physics · 2005 · 33 citations · 12 references
Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsElectronic MemoryMetal/la 2Applied PhysicsEmerging Memory TechnologyCuo 4Semiconductor MemoryResistance Switching PropertiesElectrochemistry
We have examined the colossal electro-resistance memory effect for the metal/La 2 CuO 4 ( M /LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current–voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr 0.7 Ca 0.3 MnO 3 junctions, and can be attributed to the charging effect at the Schottky-like interface.
12
Masatoshi Imada, A. Fujimori, Yoshinori Tokura · Reviews of Modern Physics · 1998 · 7.4K citations
Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Materials Science, Non-volatile Memory, Electrical Engineering +13
Current switching of resistive states in magnetoresistive manganites
A. Asamitsu, Y. Tomioka, H. Kuwahara et al. · Nature · 1997 · 1.1K citations · Full text