Colossal Electro-Resistance Memory Effect at Metal/La<sub>2</sub>CuO<sub>4</sub> Interfaces

Akihito Sawa, Takeshi Fujii, M. Kawasaki, Yoshinori Tokura

Japanese Journal of Applied Physics · 2005 · 33 citations · 12 references

Concepts

Abstract

We have examined the colossal electro-resistance memory effect for the metal/La 2 CuO 4 ( M /LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current–voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr 0.7 Ca 0.3 MnO 3 junctions, and can be attributed to the charging effect at the Schottky-like interface.

References

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