Concepedia

Interface-driven Switching

Interface-Driven Switching is a memristive switching mechanism in which the modulation of electrical resistance arises primarily from physicochemical changes localized at the interface between the active layer and electrode, distinguishing it from bulk-dominated switching processes.

113

Publications

7.1K

Citations

633

Authors

232

Institutions

Publications per year

2017–2026

55

Parents

Publications

113

Analogue signal and image processing with large memristor crossbars

Can Li, Miao Hu, Yunning Li et al. · Nature Electronics · 2017 · 1.3K citations

, , +16

Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

Applied Physics Letters · 2003 · 404 citations · Full text

, , +17

Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

Sizhao Li, Fei Zeng, Chao Chen et al. · Journal of Materials Chemistry C · 2013 · 276 citations

, , +17

Field-induced resistive switching in metal-oxide interfaces

Applied Physics Letters · 2004 · 249 citations · Full text

, , +17

Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

Kyung Min Kim, Byung Joon Choi, Cheol Seong Hwang · Applied Physics Letters · 2007 · 217 citations

, , +17

1–5 of 113

Authors

633

  1. FZ
    Fei Zeng

    Tsinghua University, China

    3 publications · 355 citations

    3

    h-index

  2. FP
    Feng Pan

    Tsinghua University, China

    3 publications · 355 citations

    3

    h-index

  3. CS
    Cheol Seong Hwang

    Seoul National University, South Korea

    3 publications · 265 citations

    3

    h-index

  4. SK
    Sungjun Kim

    Dongguk University, South Korea

    3 publications · 193 citations

    3

    h-index

  5. QL
    Qi Liu

    Chinese Academy of Sciences, China

    3 publications · 107 citations

    3

    h-index

1–5 of 633

Institutions

232

  1. Chinese Academy of Sciences

    Beijing, China

    10 h-index

    40 publications

    2.2K citations

  2. Seoul National University

    Seoul, South Korea

    6 h-index

    23 publications

    1.4K citations

  3. Dongguk University

    Seoul, South Korea

    6 h-index

    10 publications

    467 citations

  4. National University of Singapore

    Singapore, Singapore

    5 h-index

    30 publications

    2.9K citations

  5. Forschungszentrum Jülich

    Jülich, Germany

    5 h-index

    21 publications

    1.6K citations

  6. The University of Tokyo

    Tokyo, Japan

    5 h-index

    21 publications

    2K citations

  7. Hanyang University

    Seoul, South Korea

    5 h-index

    14 publications

    566 citations

  8. Tsinghua University

    Beijing, China

    4 h-index

    19 publications

    2.9K citations

1–8 of 232

Venues

  1. Applied Physics Letters

    17 publications · 1.7K citations

    17

    h-index

  2. Journal of Applied Physics

    8 publications · 410 citations

    8

    h-index

  3. Journal of Alloys and Compounds

    7 publications · 230 citations

    7

    h-index

  4. Applied Surface Science

    7 publications · 220 citations

    7

    h-index

  5. Advanced Materials

    4 publications · 375 citations

    4

    h-index

1–5