Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity

Abstract

Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of p-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of p-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold.